? semiconductor components industries, llc, 2000 november, 2000 rev. 2 1 publication order number: vn2222ll/d vn2222ll preferred device small signal mosfet 150 mamps, 60 volts nchannel to92 maximum ratings rating symbol value unit drainsource voltage v dss 60 vdc draingate voltage (r gs = 1.0 m w ) v dgr 60 vdc gatesource voltage continuous nonrepetitive (t p 50 m s) v gs v gsm 20 40 vdc vpk drain current continuous pulsed i d i dm 150 1000 madc total power dissipation @ t a = 25 c derate above 25 c p d 400 3.2 mw mw/ c operating and storage temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r q ja 312.5 c/w maximum lead temperature for soldering purposes, 1/16 from case for 10 seconds t l 300 c vn2222ll y = year ww = work week yww http://onsemi.com marking diagram & pin assignment d g to92 case 29 style 22 nchannel s 1 2 3 1 source 3 drain 2 gate 150 mamps 60 volts r ds(on) = 7.5 w preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information
vn2222ll http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics drainsource breakdown voltage (v gs = 0, i d = 100 m adc) v (br)dss 60 vdc zero gate voltage drain current (v ds = 48 vdc, v gs = 0) (v ds = 48 vdc, v gs = 0, t j = 125 c) i dss 10 500 m adc gatebody leakage current, forward (v gsf = 30 vdc, v ds = 0) i gssf 100 nadc on characteristics (note 1.) gate threshold voltage (v ds = v gs , i d = 1.0 madc) v gs(th) 0.6 2.5 vdc static drainsource onresistance (v gs = 10 vdc, i d = 0.5 adc) (v gs = 10 vdc, i d = 0.5 vdc, t c = 125 c) r ds(on) 7.5 13.5 w drainsource onvoltage (v gs = 5.0 vdc, i d = 200 madc) (v gs = 10 vdc, i d = 500 madc) v ds(on) 1.5 3.75 vdc onstate drain current (v gs = 10 vdc, v ds 2.0 v ds(on) ) i d(on) 750 ma forward transconductance (v ds = 10 vdc, i d = 500 madc) g fs 100 m mhos dynamic characteristics input capacitance (v 25 vd v 0 c iss 60 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz ) c oss 25 reverse transfer capacitance f = 1 . 0 mhz) c rss 5.0 switching characteristics (note 1.) turnon delay time (v dd = 15 vdc, i d = 600 ma, t on 10 ns turnoff delay time (v dd 15 vdc , i d 600 ma , r gen = 25 w , r l = 23 w ) t off 10 1. pulse test: pulse width 300 m s, duty cycle 2.0%.
vn2222ll http://onsemi.com 3 i d , drain current (amps) i d , drain current (amps) v ds , drain-source voltage (volts) 0.6 0.4 0.2 0.8 1.2 1 01234 5 1.6 1.4 678 910 figure 1. ohmic region v gs , gate-source voltage (volts) 01234 5 678 910 1.8 2 0.6 0.4 0.2 0.8 1 t, temperature ( c) t, temperature ( c) 0.4 1 0.8 0.6 1.2 1.6 1.4 , static drain-source on-resistance ds(on) r -60 -20 +20 2 1.8 +60 +100 +140 2.2 2.4 -60 -20 0 +20 +60 +100 +140 0.7 0.85 0.8 0.75 0.9 1 0.95 1.1 1.05 1.15 1.2 (normalized) , threshold voltage (normalized) gs(th) v figure 2. transfer characteristics figure 3. temperature versus static drainsource onresistance figure 4. temperature versus gate threshold voltage t a = 25 c v gs = 10 v 9 v 8 v 7 v 6 v 5 v 4 v 3 v v ds = 10 v 25 c 125 c -55 c v gs = 10 v i d = 200 ma v ds = v gs i d = 1 ma ordering information device package shipping vn2222ll to92 1000 unit/box vn2222llrl to92 2000 tape & reel vn2222rlra to92 2000 tape & reel vn2222rlrm to92 1000 unit/box
vn2222ll http://onsemi.com 4 package dimensions style 22: pin 1. source 2. gate 3. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 to92 case 2911 issue al on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. vn2222ll/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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